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RFMD tips high-power 48V GaN transistors

Posted: 13 Jun 2007 ?? ?Print Version ?Bookmark and Share

Keywords:GaN transistors? power transistors? high-voltage GaN devices?

RF Micro Devices Inc. (RFMD) has introduced the RF393X family of 48V gallium nitride (GaN) power transistors that offers power performance from 10W to 120W and very wide tunable bandwidth.

The RF393X consists of five 48V GaN unmatched power transistors, each of which deliver gain in the range of 14-16dB and high peak drain efficiency of greater than 65 percent at 2.1GHz.

The power transistors are well suited for wideband, high-efficiency power amplifier applications such as broadcast TV, wireless infrastructure, high-power radar, aerospace and avionics.

RFMD is developing three families of high-voltage GaN products, which include high-power GaN RFICs and high power GaN matched transistors.

The high-power GaN RFICs are fully matched high-power amplifiers that deliver high efficiency over multiple octaves of bandwidth and are suitable for applications such as military communications, public mobile radio and software definable radios. The high-power GaN matched transistors include internal matching elements to improve impedance and efficiency and are suitable for applications such as high-power radar and infrastructure for WCDMA and WiMAX.

- Ismini Scouras

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