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Fujitsu to bring GaN HEMTs to wireless comms market

Posted: 27 Jun 2007 ?? ?Print Version ?Bookmark and Share

Keywords:GaN HEMT? wireless communications market? WiMAX?

Fujitsu Laboratories Ltd has developed a new high-reliability technology for high-power gallium nitride (GaN) high electron-mobility transistors (HEMT), paving the way for commercialization of high-power GaN HEMTs in the wireless communications market.

As wireless communication data rates continue to become increasingly faster, power consumption in base stations is also increasing. GaN HEMTs are promising devices to realize lower power consumption for high-power amplifiers in next-generation, high-speed wireless communication systems. However, in order for GaN HEMTs to be used as high-power, high-voltage-endurance devices, they must maintain high reliabilitya long lifespanto withstand harsh usage conditions, including high temperatures and high drain voltages.

In long-term reliability testing, Fujitsu analyzed and discovered that in GaN HEMTs, a correlation exists between gate leakage current and reliability. Furthermore, the company observed that the increase in gate leakage current depends on the quality of crystal and the structure of GaN HEMTs. Fujitsu improved crystal quality and optimized the layer structure to mitigate the electric field in a GaN HEMT structure with few surface traps by using its proprietary n-type GaN cap layer.

The new technology enables the transistors to operate even at 200C for more than 1 million hours under pinch-off condition with a drain voltage of 50V, offering the world's longest lifecycle for GaN HEMTs. Fujitsu will strive toward applying GaN HEMTs using this new technology for the high-speed wireless communications market, such as for satellite communication, cellular base stations, WiMAX base stations and other high-speed wireless communications infrastructure.

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