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Transistors address power efficiency in portable apps

Posted: 05 Jul 2007 ?? ?Print Version ?Bookmark and Share

Keywords:bipolar junction transistors? ESD protection?

ON Semiconductor has expanded its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. The new transistors deliver maximized power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Suited for a variety of portable applications, the new low Vce(sat) BJTs are available in a multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, ChipFET and SC-88.

"Our Low Vce(sat) BJTs are leaders in power loss and thermal performance providing very economic solutions for power control," said Mamoon Rashid, vice president and general manager of ON Semiconductor's discrete products division. "These devices are strategic switches in products from mobile phones to automobiles providing cost effective solutions designers need to keep their products at the leading edge."

The new NSSxxx low Vce(sat) SMT devices are specifically designed for use in low voltage switching applications where energy efficient control is vital. They feature ultralow saturation voltage of 45mV at 1A and high current gain of 300. Offering a high ESD tolerance of greater than 8,000V, these Low Vce(sat) BJTs are self-protecting against unexpected surges and damage. By providing superior electrical performance and low temperature coefficient, they improve power efficiency and ultimately, battery power conservation without the need for additional ESD protection circuits. The medium switching speeds provide lower noise harmonics than MOSFETS and are therefore more suited to applications where EMI has to be controlled.

The low Vce(sat) BJT series is available in a wide variety of industry leading packages, including SOT-23, SOT-223, SOT-563, WDFN3, WDFN6, ChipFET, SC-88, SC74, TSOP6. They are priced between 14 to 27 cents each for quantities of 10,000 units.

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