Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > RF/Microwave
?
?
RF/Microwave??

Terminators, attenuators promise high-frequency performance

Posted: 10 Jul 2007 ?? ?Print Version ?Bookmark and Share

Keywords:line terminators? attenuators? wireless communications? base stations?

 TT electronics terminators/attenuators

Providing RF and microwave design engineers with devices for high-power applications, TT electronics IRC Advanced Film Division has released new family of line terminators and attenuators that include both chip and flanged high-power RF and microwave devices. The new terminators and attenuators combine high power dissipation with excellent high-frequency performance.

"The high frequency terminators and attenuators? provide our widest range of power ratings and package types ever making these devices suitable for applications that combine power and high frequency performance such as radar and high-energy electromagnetic devices," said Jerry Seams, applications engineering manager for IRC's Advanced Film Division.

Constructed on aluminum nitride and aluminum oxide substrates, the microwave terminators and attenuators are also being specified for RF test equipment, circulators and isolators, power splitters, cell base stations, satellite communications, wireless communications, broadband RF and spread spectrum radios, as well as aerospace, medical and industrial applications.

Depending on the device, the terminators and attenuators feature a frequency range from DC to 40GHz and impedance values of 50-800. Power ratings range from 25mW to 250W. Absolute TCRs are 50ppm/C. VSWR values range from 1.02 to 1.50 at rated frequencies.




Article Comments - Terminators, attenuators promise hig...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top