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V58C2128x SB high performance 128Mbit DDR SDRAM

Posted: 23 Jul 2007 ?? ?Print Version ?Bookmark and Share

Keywords:high speed data transfer? DDR SDRAM? I/O transactions? DRAMs?

Promos Technologies' V58C2128(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 4Mbit x 8 (804), 4 banks x 2Mbit x 16 (164), or 4 banks x 8Mbit x 4 (404). The V58C2128(804/404/164)SB achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O transactions are occurring on both edges of DQS. Operating the four memory banks in an interleaved

fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.

Please view the PDF document for more information.

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