Cree teams with Japan's NIEC on SiC diodes

Cree Inc. and Nihon Inter Electronics Corp. (NIEC) have entered into an agreement to introduce a line of silicon carbide (SiC)-based Schottky power rectifier diodes in Japan, using die manufactured by Cree.

"Silicon carbide offers numerous concrete benefits over silicon-based rectifiers. Our market is showing growing demand for the far greater efficiency and performance offered by Sic-based diodes, which enables reduced energy consumption in applications for home appliances including air conditioner and automotive invertors," said Masao Ishii, NIEC president.

"We are excited to see the growing interest in power components based on silicon carbide. Our agreement with NIEC will allow us access to their extensive marketing and sales channels in Japan, and is consistent with our current strategy to create a more global sales and marketing presence," said John Palmour, Cree executive VP for advanced devices.