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Samsung's 50nm 1Gbit DDR2 memory validated by Intel

Posted: 06 Aug 2007 ?? ?Print Version ?Bookmark and Share

Keywords:50nm 1Gbit DDR2 memory? GDDR5? mobile DRAM? DRAM?

50nm DDR2 DRAM

Samsung Electronics Co. Ltd claims that its 50nm-class DDR2 DRAM has been certified by Intel Corp. to work with Intel's existing and next-generation chipsets at speeds of 800Mbps. According to Samsung, its 1Gbit DDR2 DRAM using 50nm process is the only solution of its kind in the industry, claiming that no other company has yet developed similar process technology for DDR2.

Processing 1Gbit DDR2 DRAMs in the 50nm range doubles the productivity of a 1Gbit DDR2 DRAM fabricated on 80nm node, while improving production efficiency by 50 percent over DRAM produced on 60nm process.

As the use of Windows Vista-based PCs is expected to grow in the enterprise markets during the second half of this year, demand for higher-capacity main memory should increase proportionately.

The market is expected to shift from 512Mbit DRAM to 1Gbit DRAM memory and set manufacturers will transition from DDR2 to DDR3 beginning in late 2007.

Samsung's 50nm-class DRAM processing technology, now validated by Intel, will be used in mass producing DDR2 beginning the first half of next year, as well as other next-generation DRAM memory, including DDR3, GDDR4 and GDDR5, plus the latest mobile DRAM.

Intel validated Samsung's 60nm-class chip design technology last March. Samsung said it was the first to begin mass production at the 60nm-class earlier this year. The company added that it will be the first to start mass producing in the 50nm range next year.

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