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MOSFETs feature up to 8kV ESD voltage protection

Posted: 21 Aug 2007 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFETs? ESD voltage protection? 8kV ESD protection?


Fairchild Semiconductor has introduced a new series of high-efficiency n-channel MOSFETs with up to 8kV ESD (HBM) voltage protection. This is 90 percent higher than in existing devices on the market, the company said.

The FDS881XNZ series supports the latest architectures for battery-pack protection applications. Using Fairchild's Power Trench process, these low-Rds(on) MOSFETs, including the FDS8812NZ with Rds(on) of less than 5m次, reduce conduction losses and extend valuable battery life. They also provide rugged and robust avalanche and high peak current capability to ensure system safety by surviving unexpected voltage spikes that may afflict battery packs.

The FDS881XNZ series offers design engineers a variety of options that they can select from depending on their battery application's power management and load switching requirements. The FDS8812NZ (Rds(on) = 4m次) targets high-end laptops by addressing the thermal challenges resulting from incorporating high levels of functionality into notebook computers. The FDS8813NZ (Rds(on) = 4.5m次) is best suited for all-in-one laptops featuring displays over 15 inches, while the FDS8817NZ (Rds(on) = 7m次) is ideal for general use in low- to mid-tier models, as well as sub-notebook PCs.

The FDS881x series uses Pb-free terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All Fairchild products are designed to meet the requirements of the E.U. RoHS directive.

Samples are available today. Pricing ranges from 75 cents to $1.18, with delivery in 12 weeks ARO.

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