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IGBT offers ultralow conduction loss in low-frequency apps

Posted: 29 Aug 2007 ?? ?Print Version ?Bookmark and Share

Keywords:IGBT? fast-recovery diode? switching device?

Fairchild Semiconductor claims that its 600V/30A IGBT, the FGH30N60LSD, addresses the need for low conduction losses in low-frequency (50-400Hz) industrial applications such as solar inverters, welding machines and UPS.

Featuring extremely low saturation voltage (VCE(sat), Typ. = 1.1V), the FGH30N60LSD is designed to increase system efficiency while meeting low-frequency requirements.

"Energy efficiency is one of the primary concerns of today's industrial applications such as solar inverters, welding machines and UPSs," says Donghye Cho, director of Fairchild's high voltage functional power solutions. "By tailoring our new IGBT to achieve extremely low conduction loss and then combining this product with our SuperFET MOSFET offering high switching frequency and low RDS(on), Fairchild demonstrates its ability to solve complex design challenges."

The FGH30N60LSD is a MOS-gated high-voltage switching device that combines the best features of MOSFETs and bipolar transistors. The device integrates a fast-recovery diode (FRD) to help designers reduce component count while further ensuring system reliability. Uniting SuperFET technology with a lifetime killing process, our SuperFET FRFET offers improved body-diode characteristics, which enable operation at high switching frequency, extremely low on-resistance, excellent turn-off dv/dt immunity and low EMI. All of these features increase system efficiency and reliability.

The FGH30N60LSD uses Pb-free terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020.

Packaged in TO-247 housing, samples of the device are available now at $8.70 in 1,000 quantities. Delivery is 12 weeks ARO.

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