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Winbond launches new mobile memory lines

Posted: 06 Sep 2007 ?? ?Print Version ?Bookmark and Share

Keywords:mobile memory? new Winbond lines? DRAM? PSRAM?

Taiwan's Winbond Electronics Corp. is launching two new families of memory components for mobile applicationsthe low-power DRAM and pseudo-SRAM (PSRAM)at this week's Electronics & Information Fair in Hangzhou, China.

In recent years, rapid changes in mobile device specifications have stimulated demand for increased memory capacity, especially for multimedia-rich and wide-band applications. Winbond's low-power DRAM family provides both LPSDR and LPDDR, with very large capacities: 128Mbits to 512Mbits. The entire family conforms to Jedec specifications for both functionality and pin definitions, making it easy for users looking for multiple sources.

PSRAM enables faster memory speed as a device for the access of mobile applications. PSRAM features a standard SRAM interface, one-transistor DRAM-like memory cells and an on-chip refresh circuit, which make it an easy design-in. For added flexibility, Winbond's PSRAM family provides data densities from 16Mbits to 256Mbits. The 256Mbit PSRAM, which complies with Cellular RAM 2.0G Standard, has one of the highest densities available in the market.

The exhibition is hosted by the Taiwan Electrical and Electronic Manufacturers' Association (TEEMA), the Hangzhou municipal government and the Trade Development Bureau of the Ministry of Commerce.

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