Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > Manufacturing/Packaging
?
?
Manufacturing/Packaging??

Broadband illumination captures critical defects

Posted: 17 Sep 2007 ?? ?Print Version ?Bookmark and Share

Keywords:tunable broadband brightfield? critical defect capture? yield analysis? signal-to-noise ratio?

Chipmakers are innovating with new materials and structures to extend performance while conserving power in their next-generation ICs. This has given rise to a wide variety of new defect types and noise sources. In addition, reticle enhancement techniques, optical proximity correction and other complex lithography technologies are causing a rise in system defects.

Faced with a broad range of defect types on all layers, chipmakers are finding that they require a highly sensitive and flexible inspection solution for process control. Modeling studies and fab experience show that different defect types and device layers require different inspection wavelengths for reliable defect detection. Thus, a tunable broadband tool spanning deep ultraviolet through visible wavelengths is the best solution for capturing the widest range of defect types.

This article uses optical principles to compare and contrast tunable broadband technology with a single-wavelength brightfield approach. Also discussed here is the experimental evidence of defect types captured using longer wavelengths that are undetectable using a shorter wavelength.

Please view the PDF document for more information.




Article Comments - Broadband illumination captures crit...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top