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Dual-level LDO simplifies programming of eFUSE, SIM cards

Posted: 16 Oct 2007 ?? ?Print Version ?Bookmark and Share

Keywords:dual-level LDO? linear regulator? switchable voltage?

Texas Instruments Inc. has introduced a dual-level 200mA low-dropout (LDO) linear regulator with simple dynamic voltage scaling in a tiny 5-ball CSP, the first of its kind according to the company. These devices target applications that require two levels of output voltage regulation for programming of eFUSE or SIM cards with additional memory such as wireless handsets, PDAs, smart phones, MP3 players and other handheld devices.

The TPS728185315 LDO features a very low dropout of 230mV with an input voltage range of 2.7-6.5V and fixed output voltages between 0.9-3.6V. The LDO also comes with EEPROM preset voltage options of 1.85V and 3.15V.

The LDO enables the designer to set switchable voltages for eFUSE and SIM cards such as a higher voltage for fuse programming or with detection of the SIM card, and a lower voltage at the end of programming. The designer can switch between two voltages in a finite amount of time without over and undershoots, said TI. Dynamic voltage scaling also helps reduce leakage currents in sub-micron multimillion transistor processors used extensively in portable applications such as TI's ultralow power MSP430 microcontrollers.

An integrated precision bandgap and error amplifier provides an overall 2.5 percent accuracy over load, line and temperature extremes. The TPS728185315 provides a high power-supply rejection ratio (PSRR) over a wide frequency range of up to 1MHz, and a fast 160?s start-up time. The device is fully specified over a temperature range of -40C to 125C.

The LDO comes in a 1mm x 1.4mm x 0.6mm, 5-ball WCSP and 6-pin, 2mm x 2mm SON packaging. Suggested retail price is $0.39 each in quantities of 1,000.

- Gina Roos
eeProductCenter




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