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Non-volatile SRAM offers infinite read, write cycles

Posted: 18 Oct 2007 ?? ?Print Version ?Bookmark and Share

Keywords:non-volatile SRAM? nvSRAM? infinite cycles?

Cypress Semiconductor Corp. introduced a 4Mbit non-volatile SRAM (nvSRAM) manufactured on Cypress's S8 0.13?m silicon oxide nitride oxide silicon (SONOS) embedded non-volatile memory technology. The nvSRAM features access times as low as 15ns, infinite read, write and recall cycles, and 20-year data retention, making it suitable for applications requiring continuous high-speed writing of data and absolute non-volatile data security including RAID applications, harsh environment industrial controls, and data logging functions in automotive, medical and data communications systems.

The nvSRAMs offer the best alternative for fast, non-volatile memory, the company claimed. They reduce board space and design complexity compared to battery-backed SRAMs, and are more economical and reliable than MRAM or FRAM. The new products are the latest in a series of nvSRAMs from Cypress, which include 256Kbit and 1Mbit nvSRAM devices currently shipping in production volumes. Further introductions are expected in the first half of 2008.

SONOS Technology
The new 4Mbit nvSRAMs are the first manufactured on Cypress's S8 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance. A leader in SONOS process technology, Cypress will use the S8 technology in next generation PSoC mixed-signal arrays, OvationONS laser navigation sensors, programmable clocks and other products. SONOS is highly compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness. In addition, SONOS provides a more robust, manufacturable and cost-effective solution compared to other embedded non-volatile memory technologies.

"The nvSRAM melds two of Cypress's traditional strengths, SRAM and non-volatile memory, into a monolithic, high-performance solution required by many applications," said Robert Dunnigan, vice president of Non-Volatile Memory business unit at Cypress. "In addition, we offer the market's broadest distribution and best support for these products."

"This introduction represents a seminal touchpoint in Cypress's process development evolution," said Paul Keswick, Cypress's executive vice president of new product development. "We have turned our internal resources towards value-added, proprietary processes such as S8 that yield market-differentiated solutions. A number of important new products are under development using this process."

The 4Mbit nvSRAM is available in either a 512Kbit x 8 (CY14B104L) or 256Kbit x 16 (CY14B104N) configuration. The devices are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRAM to the device's nonvolatile elements take place automatically at power down. On power up, data is restored to the SRAM from the nonvolatile memory. Both operations are also available under software control.

Cypress's 4Mbit nvSRAM is currently sampling, with production starting in the first quarter of 2008.

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