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Switching MOSFETs provide higher ID, lower Rds(on)

Posted: 18 Oct 2007 ?? ?Print Version ?Bookmark and Share

Keywords:switching MOSFETs? n-channel MOSFETs? DC/DC converters?

TPCA8012-H, TPCA8019-H

Toshiba America Electronic Components Inc. (TAEC) has added two new devices to its UMOS V-H Series high-speed switching MOSFETs to provide higher drain current (ID) and lower on-state resistance (Rds(on)), combined with the power efficiency advantages of the other members of the product family.

Developed by Toshiba Corp., the TPCA8012-H and TPCA8019-H n-channel MOSFETs extend the UMOS V- H Series with higher drain current of 40A and 45A (max.) and lower Rds(on) of 4.9m次 and 3.1m次, respectively (max. value at VGS = 10V). The UMOS V-H Series MOSFETs are targeted for use in synchronous DC/DC converters in power supplies for servers, desktop and mobile computers, and portable electronics devices.

"Our UMOS V-H Series MOSFETs are designed to reduce the size and improve the power efficiency of synchronous rectification DC/DC converters for notebooks, servers and on-board power supplies. These new devices provide higher performance options for power supply designers," said Jeff Lo, business development manager at TAEC's discrete power products unit.

The new devices join nine other members of the UMOS V-H Series to provide a range of drain current, drain-source voltage and a selection of other performance characteristics to meet various application requirements. Compared to previous process technology from Toshiba, the UMOS V-H Series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous DC/DC converter, including lower on-state resistance (RDSON) and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance (Cgd), lower Cgd/Cgs ratio, lower gate resistance (Rg), and optimized gate threshold voltage. On the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge (QSW) and gate resistance (Rg).

The TPCA8012-H and TPCA8019-H devices are offered in SOP Advance packages with a footprint of 5mm x 6mm to help trim board area and device temperature. The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and a RDSON of 4.9m次 (max. value at VGS = 10V). TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating, with a maximum drain current of 45A and an RDSON of 3.1m次 (max. value at VGS = 10V). The SOP Advance package from Toshiba features a 41 percent lower profile than a standard SOP-8 package, and enables approximately 47 percent higher power dissipation.

Samples of the TPCA8012-H and TPCA8019-H are available now, priced at 45 cents and 60 cents, respectively. Production quantities are also available today.

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