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Samsung debuts 64Gbit MLC NAND flash memory

Posted: 26 Oct 2007 ?? ?Print Version ?Bookmark and Share

Keywords:NAND? flash memory? memory card?

64Gbit NAND flash

Samsung Electronics Co. Ltd has developed the world's first 64Gbit multilevel cell (MLC) NAND flash memory chipusing 30nm-class process technology. Combining 16 64Gbit flash devices can be combined to make a 128Gbyte memory card that can store 80 DVD resolution movies or 32,000 MP3 music files.

According to Samsung, the 30nm 64Gbit NAND flash marks the eighth consecutive year that the density of memory has doubled and the seventh straight year that the nanometer scale has improved for NAND flash since the 100nm 1Gbit NAND was developed in 2001.

The flash device was developed through the use of a manufacturing process called self-aligned double patterning technology (SaDPT). In SaDPT, the first pattern transfer is a wider-spaced circuit design of the target process technology, while the 2nd pattern transfer fills in the spaced area with a more closely designed pattern.

SaDPT represents a pivotal advancement beyond the charge trap flash (CTF) technology-based NAND flash that Samsung developed last year when it introduced silicon nitride and a new structural configuration for flash memory. SaDPT resolves a critical bottleneck to forming sub-30nm circuitry by expanding the role that conventional lithography technology plays in the manufacturing process. Both Samsung's CTF-based NAND flash technology and SaDPT are expected to provide improvements in cost efficiency for next-generation nanometer-scale designs.

Samsung's SaDPT will employ existing photolithography equipment in 30nm production, which is expected to be commercialized beginning in 2009. By using conventional photolithography equipment, Samsung can not only significantly speed up the process but also improve the cost efficiency of its manufacturing operations without additional facility investment. Samsung has applied for 30 patents in connection with the new 64Gbit flash device.

Samsung also has developed a 32Gbit single level cell (SLC) NAND flash memory based on the same technology applied to its 64Gbit device. Samsung's continued success in introducing higher density NAND flash will intensify demand for solid state drives in notebooks and other NAND-based storage devices for applications such as digital camcorders and enterprise servers.

Samsung will begin production of 30nm-class 64Gb flash devices in 2009.

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