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RF/Microwave??

HEMT transistor handles Ku band

Posted: 01 Nov 2007 ?? ?Print Version ?Bookmark and Share

Keywords:GaAs HEMT transistor? Ku band?

MGF4941AL

Mitsubishi Electric has introduced a GaAs HEMT (High Electron Mobility Transistor) MGF4941AL that is mainly intended for use in the Ku band. Typical applications are the first stage low-noise amplifiers (LNAs) for down converters in Direct Broadcast Satellite (DBS) and Very Small Aperture Terminal (VSAT) receivers operating in the 10-12GHz range.

At a frequency of 12GHz, the HEMT provides power gain of 13.5dB. Compared to its predecessor MGF4953A the new MGF4941AL's gain is 0.5dB better. The noise figure is as low as 0.35dB for the new plastic mold device.

MGF4941AL is available in the new 4-pin plastic mold package.

- Henri Arnold
EE Times Europe




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