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300V IGBTs can replace power MOSFETs

Posted: 04 Dec 2007 ?? ?Print Version ?Bookmark and Share

Keywords:300V IGBT? power MOSFET? replacement?

A family of 300V IGBTs that can replace power MOSFETs have been introduced by IXYS Corp. Built with the company's high density metal oxide semiconductor (HDMOS) IGBT process, the five new productsthe IXGH42N30C3, IXGH60N30C3, IXGH85N30C3, IXGH100N30C3 and IXGH120N30C3are capable of hard-switching up to 100kHz with current ratings of 42-120A.

This combination of high switching speeds and low conduction losses gives power designers a new high-value option for switching applications at 300V and below, said IXYS.

The 300V IGBT devices are optimized for low Vsat, lower forward voltage drop, with a higher current density capability than an equivalent MOSFET. As a result, the 300V IGBTs can operate with better efficiency and with a smaller die size resulting in lower costs when compared to 300V power MOSFETs, according to IXYS. These devices are also rugged in unclamped inductive switching applications, i.e., unclamped inductive switching (UIS) rated, comparable to most rugged power MOSFETs, added the company.

The IGBTs are available in TO-247 discrete packages. Additional package offerings will be made available in the future. All the devices may also be co-packaged with IXYS' high-performance HiPerFRED fast diodes.

Applications include PFC circuits, UPS systems, inverters for solar energy, switch-mode or resonant-mode converters and power supplies, pulse generators, PWM light control, PWM heaters, capacitive discharge applications and a variety of motor control applications

- Gina Roos

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