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IBM, ATMI collaborate on implanted photoresists

Posted: 06 Dec 2007 ?? ?Print Version ?Bookmark and Share

Keywords:collaboration? implanted photoresist? chemical formulations?

A joint development agreement to demonstrate advanced chemical formulations for highly implanted photoresist strip applications has been forged between ATMI Inc. and IBM Corp.

The photoresist strip applications will allow the design and production of next-generation semiconductor devices targeting 45nm and future device manufacturing processes.

Under the agreement, ATMI will add its semiconductor materials and process experience to IBM's IC design and manufacturing knowledge. Together the two companies will work to integrate new materials and thin film processes to more quickly and effectively address the challenges faced in advanced IC production.

"New materials are driving IC performance,'' said Tod Higinbotham, EVP, Process Solutions for ATMI. "Our collaboration with IBM will benefit both companies as we seek to create and commercialize next-generation materials and leading-edge semiconductor processes for ever-more-powerful devices. We are addressing specific materials issues that are plaguing the semiconductor industry worldwide todayand those that will become obstacles in the future.''

"IBM believes that process and material improvements will make a significant contribution to the future of the semiconductor industry,'' said Ronald Goldblatt, engineer and senior manager, IBM Research. "Our joint development work combines our strengths in developing successful materials solutions for leading edge device applications.''

The joint development activities will take place at ATMI's headquarters and at IBM's Watson Research Center, both in the United States.

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