GaAs MMIC has gain stage, passive doubler

Mimix Broadband Inc. has introduced an active doubler in an RoHS compliant 3mm x 3mm plastic QFN package that delivers 20dBm output saturated power (Pout) and 35dBc fundamental suppression.

Using 0.15?m gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the doubler covers the 13.5-17/27-34GHz frequency bands and integrates a gain stage, passive doubler and driver amplifier onto a single device. Identified as XX1007-QT, the device is well suited for VSAT, millimeter-wave point-to-point radio, LMDS or SATCOM applications.

The XX1007-QT includes on-chip ESD protection and an integrated bypassing capacitor, eliminating the need for any external components. The device has a self-bias configuration, requiring only a positive 5V supply.

Mimix performs 100 percent RF testing on the XX1007-QT. The device is available from stock.

- Ismini Scouras
eeProductCenter