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Toshiba, IBM extend R&D partnership to 32nm

Posted: 20 Dec 2007 ?? ?Print Version ?Bookmark and Share

Keywords:32nm? CMOS process? IBM alliance?

IBM and Toshiba Corp. have extended their collaboration by entering into a joint development agreement on 32nm CMOS process technology.

Since December 2005, the companies have collaborated on fundamental advanced research related to semiconductor process technologies at the 32nm technology generation and beyond at the research facilities in Yorktown and Albany, New York. Building on the success of this ongoing research collaboration, the two companies have agreed to extend the scope of the joint development work to now include 32nm bulk CMOS process technology.

Under the new agreement, Toshiba joins a six-company IBM Alliance for 32nm bulk CMOS process technology development. Through the collaboration, IBM and Toshiba plan to accelerate development of next-generation technology to achieve high-performance, energy-efficient chips at the 32nm process level.

"This agreement caps a year of extraordinary momentum for IBM and its semiconductor Alliance Partners," said Gary Patton, VP for IBM's semiconductor research and development center. "In 2008 we'll continue to strive to collectively deliver the industry breakthroughs and manufacturing milestones that come from talented engineers and semiconductor experts working in an open, collaborative environment with access to world class R&D facilities such as UAlbany NanoCollege's Albany NanoTech complex."

"In addition to continuing the successful collaboration on fundamental advanced research, Toshiba will jointly develop the state-of-the-art 32nm bulk CMOS process integration technology, as a member of the world-class seven-company IBM Alliance," said Shozo Saito, corporate senior VP of Toshiba Corp and president and CEO of Toshiba's semiconductor company. "Concurrently we will also accelerate our own development of integration technology for the 32nm process at Toshiba's Advanced Microelectronics Center in Yokohama, toward achieving early production of leading-edge devices."




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