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GaN transistor touts ultrahigh breakdown voltage

Posted: 21 Dec 2007 ?? ?Print Version ?Bookmark and Share

Keywords:GaN? power transistor? power switching devices?

A GaN power transistor with ultrahigh breakdown voltage and low on-state resistance has been announced by Panasonic, the brand by which Matsushita Electric Industrial Co. Ltd is generally known.

The transistor's breakdown voltage is 10,400V, 5x higher than previously reported highest values in GaN power transistors. It's low on-state resistance is at 186?cm ?. These values are made possible by the use of high quality GaN film on a highly resistive sapphire substrate coupled with the novel structure of the device: a backside electrode with through-holes in the sapphire eliminates the overlap of the electrodes. The through-hole in chemically stable sapphire is formed by a novel laser drilling technique using a high-power ps laser. In addition, Panasonic's proprietary epitaxial growth technology greatly helps to extract the superior inherent material property of GaN.

Applications for 110 Japan and 69 international patents have been filed. The technology was presented at the International Electron Devices Meeting held in December 2007.

This GaN power transistor is suitable for high-voltage power switching devices for industry and electrical power systems.

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