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Dongbu designs CMOS sensor at 110nm

Posted: 10 Jan 2008 ?? ?Print Version ?Bookmark and Share

Keywords:CMOS image sensor? 110nm?

Dongbu HiTek has completed development of a 1.3Mpixel CMOS image sensor (CIS) device at the 110nm node.

Targeting major manufacturers of mobile handsets worldwide, the CIS chip was developed in partnership with the company's SETi subsidiary, which specializes in CIS design. Volume production is scheduled to begin as early as the first quarter.

The 110nm CIS chip represents Dongbu HiTek's first joint product development with SETi, which became a majority-owned subsidiary in July 2007. Dongbu HiTek expects continuing collaboration with SETi to drive the sequential near-term development of proprietary 2-, 3- and 5Mpixel CIS chips at the 110nm node.

- Ismini Scouras

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