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Device integrates power MOSFET, Schottky barrier diode

Posted: 28 Jan 2008 ?? ?Print Version ?Bookmark and Share

Keywords:power MOSFET? Schottky barrier diode? DC/DC converters?

Toshiba America Electronic Components Inc. (TAEC) has expanded its lineup of MOSBD devices, which integrate a power MOSFET and a Schottky barrier diode onto a single die to save board space, increase power efficiency, and reduce wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode.

Developed by Toshiba Corp., the two new MOSBD devices are well suited for high-efficiency DC/DC converter applications in notebook PCs, portable devices and other electronics where efficient power management is required.

The new devices are based on U-MOS V, the fifth-generation process technology in the Toshiba fast switching series, which enables lower on-state resistance for low-side MOSFETs, and faster switching for high-side MOSFETs. Each of the MOSBDs utilizes Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to reduce further on-state resistance.

The addition of these two new MOSBDs to the current lineup provides a selection of drain current, Rds(on) and package to meet a range of system design requirements. The TPCA8A02-H features drain-source voltage of 30V, drain current of 34A (max.), Rds(on) of 4.8? (typ.), and low-profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm. The TPC8A03-H features drain-source voltage of 30V, drain current of 15A (max.), Rds(on) of 5.1? (typ.) and SOP-8 packaging, which measures 5mm x 6mm x 1.6mm.

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