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Toshiba touts 'fastest' embedded DRAM tech

Posted: 11 Feb 2008 ?? ?Print Version ?Bookmark and Share

Keywords:embedded DRAM? system LSI? graphic application?

Toshiba Corp. has developed what it claims to be the fastest circuit technology for embedded DRAM for system LSI, achieving a speed of 833MHz at 32Mbit density.

Embedded DRAM is applied to SoCs for graphic application, as it can read larger amounts of data at higher speeds. As video images achieve higher levels of definition, higher processing speeds of larger densities are required.

To realize high-speed operation, Toshiba applied a "pseudo two-port system," a technology that virtually divides the overall memory into two and then reads and writes data in parallel and alternately. By replacing conventional serial read and write system with the new parallel technology, and optimizing such circuits as the command structure, Toshiba achieved a high level of embedded DRAM performance at 32Mbit, a density actually applicable to products.

System LSI with embedded DRAM memory will find application in next-generation high-end digital consumer products, game applications, mobile phones, projectors and other image-related applications that require high-speed transfer of large volumes of data. Toshiba plans to apply this technology to its 65nm system LSI process, and to meet market demand for advanced graphic applications through the early launch of SoC integrating the new embedded DRAM.

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