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Qimonda details 30nm DRAM road map

Posted: 27 Feb 2008 ?? ?Print Version ?Bookmark and Share

Keywords:30nm road map? DDR2? DRAM?

Qimonda AG has disclosed its technology road map to the 30nm generation featuring cell sizes of 4F?.

The company's Buried Wordline DRAM technology combines high performance, low power consumption and small chip sizes to advance its product portfolio. Qimonda is introducing the technology in 65nm and plans to begin production of a 1Gbit DDR2 in 2H 08.

Qimonda targets to start mass production of 46nm Buried Wordline DRAM technology in 2H 09. This node promises to offer more than twice the bits per wafer over the company's 58nm trench technology. The company expects an additional one-time investment of approximately $148 million in 2009 and 2010 to convert its existing in-house trench capacities to the Buried Wordline technology, which it expects to finance from its cash flows. This relatively low level of additional investment is possible by leveraging a combination of the company's Buried Wordline and lean manufacturing process with a mainstream stack capacitor.

"This new technology has the potential to deliver improvements in our productivity and cost per bit that are unprecedented in our company's history," said Kin Wah Loh, president and CEO of Qimonda AG. "We are the first in the industry to unveil a DRAM technology road map down to the 30nm generation, enabling cell sizes as small as 4F?. The introduction is the result of our continuous innovation as a leader in the development of memory products. This step also opens up further partnering opportunities."

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