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MOSFETs trim power losses by up to 30%

Posted: 28 Feb 2008 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFETs? power loss? on resistance?


Infineon Technologies AG has announced that it has added three new families of power semiconductors to its OptiMOS 3 n-channel MOSFET portfolio. The OptiMOS 3 40V, 60V and 80V families offer performance in such key power conversion metrics as on-state resistance, which allows them to reduce power losses by as much as 30 percent in a given standard Transistor Outline (TO) package. The low switching losses and on-state resistance of the OptiMOS 3 families promise an increase in power densities by up to 30 percent, and a reduction in part count for a given application of more than 25 percent, compared to competitive solutions.

The new MOSFETs are intended for a variety of power conversion and management applications, including switched-mode power supplies (SMPS), DC/DC converters and DC motor drives in computers, home appliances, small electric vehicles, industrial automation systems, telecommunications equipment and such consumer devices as power tools, electric lawnmowers and fans.

The new OptiMOS 3 families include MOSFETs that achieve an Rds(on) of 1.6m次 for 40V products in SuperSO8 packages, 3.5m次 for 60V products in D-PAK packages and 2.5m次 for 80V products in D?-PAK packages. The figure of merit of these devices is as much as 25 percent better than that of their closest competitors, the company said, and enables fast switching while minimizing conduction losses and on-state power dissipation, allowing higher power densities. It also results in less heat generation in the driver and, therefore, improved system reliability. In addition, the low Rds(on) allows the use of smaller packages, such as the 3mm x 3mm S3O8, so less space is required in a design, thereby increasing power density.

Product details
The OptiMOS 3 40V family meets the needs of fast-switching SMPS and DC/DC converters in a variety of applications, such as printers, non-isolated industrial converters and isolated DC/DC converters, in which 30V MOSFETs do not offer sufficient breakdown voltage. It has Rds(on) of 1.6m次 in a SuperSO8 package, which is more than 50 percent below that of its closest competitor, the company said. This is combined with a thermal resistance of 1∼ K/W and a continuous current rating of 100A to set a new standard for low-ohmic MOSFETs in the 40V class. The family also includes what is said to be the first 40V breakdown voltage MOSFET to be available in an S3O8 package, which represents a 60-percent footprint reduction over standard SO8 or SuperSO8 devices.

The OptiMOS 3 60V and 80V families are primarily intended for secondary side rectification in SMPS and in motor controls and drives for DC/DC brushless and brushed motors. The 80V devices are also suited to telecommunications applications. The new MOSFETs promise best-in-class Rds(on), which is linked with a thermal resistance of 0.5∼ K/W and an unrestricted continuous current rating of 100A. They are also available in D-PAK packages that reduce the required board space by more than 50 percent compared to conventional D2-PAK packages, the company said, and provide a package-height reduction of 40 percent in SMPS designs.

The new OptiMOS 3 40V, 60V and 80V power MOSFET families are available in all of the standard TO-type package types, as well as in SuperSO8 and S3O8 packages, with a range of Rds(on) figures. Members of the OptiMOS 3 60V family are available in production quantities, and 40V and 80V devices are currently being sampled.

In 10,000-piece quantities, the OptiMOS 3 40V, with Rds(on) of 1.6m旬 in an SSO8 package, is priced at less than 99 cents. In the same quantities, a 3.5m旬 OptiMOS 3 60V in a D-PAK package is priced at 99 cents, and a 2.8m旬 OptiMOS 3 80V in a TO-220 package is priced at $1.99.

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