Toshiba ships samples of higher-efficiency MOSFETs

Toshiba America Electronic Components Inc. has expanded its power semiconductor lineup with the first products in a new family of high-speed switching MOSFETs based on UMOS VI-H, the latest (sixth) generation trench process in the company's fast switching series, which enables a significant reduction in gate switch charge and on-state resistance (RDS(ON)), resulting in greater power efficiency.

Developed by Toshiba Corp., the two new MOSFETs, TPCA8028-H and TPC8035-H, are intended for use in for high efficiency DC/DC converter applications in notebook PCs and other electronic applications. The two devices achieve lower RDS(ON) than was possible with the previous generation technology, as well as fast switching, enabled through lower gate charge (QSW) and lower gate resistance (RG). The new MOSFETs also feature Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to further reduce RDS(ON).

The TPCA8028-H is for use as a low-side MOSFET in DC/DC converter applications, and features drain-source voltage (VDSS) of 30V (max.), drain current (ID) of 50A (max.), RDS(ON) of only 2.0m? (typ.), and low profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm.

The TPC8035-H, a similar device in SOP-8 packaging measuring 5mm x 6mm x1.6mm, features VDSS of 30V (max.), ID of 18A (max.), and RDS(ON) of only 2.3 m? (typ.).

Samples of the Toshiba UMOS VI-H TPCA8028-H in SOP-Advance packaging and the TPC8035-H in SOP-8 packaging are available now, priced at $0.65 and $0.60, respectively.