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Hynix, Grandis enter RAM tech license deal

Posted: 03 Apr 2008 ?? ?Print Version ?Bookmark and Share

Keywords:non-volatile memory? RAM? flash memory? license agreement?

Hynix Semiconductor Inc. and Grandis Inc. have signed a long-term license agreement for memory products incorporating Grandis' patents and intellectual property in spin-transfer torque RAM (STT-RAM). The two companies have also entered into a collaborative agreement to jointly integrate Grandis' fundamental STT-RAM technology into Hynix's future memory products.

STT-RAM is a next-generation, non-volatile memory solution that overcomes the limitations of conventional magnetic RAM technologies. While existing memory technologies prove to be very difficult for manufacturing beyond the 40nm process node, STT-RAM shows scalability with shrinking design rules, which translates to greater density and, ultimately, lower cost per die. STT-RAM also consumes less power than existing mainstream memories, and provides unlimited endurance as well as fast read/write capability.

Technical teams from both companies will work together to implement Grandis' STT-RAM technology, including magnetic tunnel junction (MTJ) materials and structures optimized for low writing current and high thermal stability, integration of MTJ and CMOS processes and design of STT-RAM cells and memory arrays.

"Through this partnership with Grandis, we look forward to integrating leading-edge STT-RAM technology into our semiconductor manufacturing processes and to a new era in memory capability at advanced technology nodes," said Sung Wook Park, head of R&D division at Hynix.

"STT-RAM is a disruptive technology that combines all the benefits of SRAM, DRAM and flash memory, as well as offering scalability to future process nodes," said Yiming Huai, VP of engineering and chief technical officer of Grandis. "Our recent advances in magnetic materials have significantly lowered write current and opened up new markets for STT-RAM."

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