Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Power/Alternative Energy
Power/Alternative Energy??

Innovative FET design works with radar, avionics apps

Posted: 05 May 2008 ?? ?Print Version ?Bookmark and Share

Keywords:FET? HVVi Semiconductors HVVFET? avionics radar apps?

The HVVFET (high-voltage vertical field effect transistor) from HVVi Semiconductors is a family of silicon power transistors targeted at L-band avionics and pulsed-radar applications such as IFF, TCAS, TACAN, Mode-S and ground-based radar systems. The vendor claims that their innovative FET design is the next generation after designs based on DMOS and LDMOS lateral structures, with a vertical structure, which allows heat to be extracted from the hottest spot of the device and flow directly to the heat sink.

In turn, this allows the single-supply, 24-48V power amplifiers (PA) to offer twice of power density of competitive devices along with a 30 percent efficiency improvement, operating ruggedness with 20:1 VSWR load mismatch (twice that of comparable devices), and 3dB more gain than available devices. The greater efficiency also yields a much smaller footprint, or the ability to use a single device in place of multiple amplifier stages. The VSWR tolerance reduces or eliminates the need, and thus the cost and board space, for isolators and circulators common in these applications, while the 48V operation supports reduced current and thus higher-efficiency, higher-reliability operation.

The initial offering from HVVI includes three devices:

  • The HVV1011-300, for pulsed applications in the L-band from 1030-1090MHz. It provides over 300W of pulsed output power with 15dB gain and 48 percent typical efficiency, at pulse widths of 50ms and pulse period of 1ms. It is housed in an industry-standard flanged package. In lots of 1-49 pieces, the FET is $398.31.

  • The surface-mount HVV1214-25 for pulsed radar applications in the 1.2-1.4GHz L-band range, with 25W output. Typical gain is 17.5dB with 200ms pulse width and 10 percent duty cycle. Low-volume price is $135.69.

  • The flanged HVV1214-100, with 100W output and 19.5dB typical gain, under the same conditions as the HVV1

    Engineering evaluation kits are available which include PC board, PA FET, connectors, and heat sink, if necessary. All three products are sampling now, with volume production in Q3.

    - Bill Schweber
    Planet Analog

  • Article Comments - Innovative FET design works with rad...
    *? You can enter [0] more charecters.
    *Verify code:


    Visit Asia Webinars to learn about the latest in technology and get practical design tips.

    Back to Top