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Thermal simulation of power MOSFETs on the P-Spice platform

Posted: 08 May 2008 ?? ?Print Version ?Bookmark and Share

Keywords:Thermal simulation? power MOSFETs? P-Spice platform?

R-C thermal model parameters for Vishay power MOSFETs available under the product information menu offer a simple means to evaluate thermal behavior of the MOSFET under a defined transient operating condition.

Steady state values of thermal impedance, Rth(j-a) and Rth(j-c) / Rth(j-f), along with normalized thermal transient

impedance characteristics published in a power MOSFET datasheet, are adequate to analyze the thermal behavior of a part under a regular wave-shaped, single pulse or the periodic power dissipation of known duty cycle.

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