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Chip brings power efficiency to LDMOS base stations

Posted: 20 May 2008 ?? ?Print Version ?Bookmark and Share

Keywords:base station power transistor? LDMOS? Doherty amplifier?

NXP Semiconductors has launched the BLC7G22L(S)-130 base station power transistorthe first of its products to feature NXP's Gen7 LDMOS technologyoptimized for high power use and Doherty amplifier applications.

The seventh generation LDMOS technology from NXP enables the highest-efficiency LDMOS solutions available today, increasing power density by 20 percent and improving power efficiency by two percent, while reducing the thermal resistance Rth by over 25 percent compared to the previous generation. First prototypes of the NXP Gen7 LDMOS base station prior transistor will be demonstrated at the IEEE MTT-S International Microwave Symposium 2008.

"As mobile operators start to offer ultra-fast services based on technologies such as HSDPA and LTE, power demands on the wireless network infrastructure are reaching unprecedented levels. Using Gen7 LDMOS technology, NXP now offers the highest performance LDMOS base station transistors in the industry, enabling higher power-added efficiency than any product on the market," said Mark Murphy, marketing group manager, RF power product line of NXP.

The Gen7 LDMOS delivers record performance up to 3.8GHz, and offers 25 percent lower output capacitance, enabling wideband output matching and leading to simplified, better performing Doherty amplifier designs. Doherty has emerged as the amplifier architecture of choice for new base station transmitters, helping wireless network operators to increase efficiency and reduce operating costs.

Engineering samples of the BLC7G22L(S)-130 will be available in Q3 08. Additional products based on NXP Gen7 LDMOS technology will be released in 2009.





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