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RF/Microwave??

Mitsubishi offers Ku band low-noise GaAs HEMT

Posted: 27 May 2008 ?? ?Print Version ?Bookmark and Share

Keywords:HEMT GaAs? band Ku? reception systems DBS?

Mitsubishi Electric Corp. has developed a full-mold package low noise Ku1 band GaAs high electron mobility transistor (HEMT), the MGF4935AM that is highly suitable for low-noise amplifiers in Direct Broadcast Satellite (DBS) reception systems and Very Small Aperture Terminal (VSAT) systems. Shipment will commence this month.

By improving chip performances and by optimizing package structure, Mitsubishi was able to improve the noise figure of the new device by 0.05dB to 0.45dB, compared to previous model (full-mold package MGF4934BM). This improvement, says the company, allows this product to be used in the first stage of amplifiers, which requires low noise. Moreover, Mitsubishi asserts that the 4-pin full-mold package HEMT, available at a lower price than other HEMTs, improves cost performance in satellite communication equipment.





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