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Hynix, Samsung race to adopt 3bit/cell NAND

Posted: 09 Jun 2008 ?? ?Print Version ?Bookmark and Share

Keywords:NAND? flash? memory? storage?

Two Korean memory vendorsHynix Semiconductor Inc. and Samsung Electronics Co. Ltdare separately gearing up for a push into the 3bit/cell NAND flash race.

Recently, Hynix developed a 32Gbyte NAND flash memory using 3bit/cell technology, based on a report from Chosun Ilbo.

''We were surprised to hear from one of our contacts that Samsung will start producing 3bit/cell NAND by the end of 2008,'' said Daniel Amir, analyst, Lazard Capital Markets, in a recent report.

''Until now, this technology has been the highlight of the SanDisk Corp.'s story. The company, working along with Toshiba, are the only companies that have this technology,'' he said. ''However, Samsung's attempt to produce 3bit/cell NAND puts a challenge to SanDisk's IP claim on this technology. While we do not know how this could play out, we see this data point as potentially negative for SanDisk,'' he noted.

- Mark LaPedus
EE Times

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