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RF/Microwave??

Transistors remit high peak power for wireless net

Posted: 24 Jun 2008 ?? ?Print Version ?Bookmark and Share

Keywords:power transistors? wireless? 4G cellular?

Infineon Technologies AG recently launched a new family of RF power transistors specifically targeted at wireless infrastructure applications in the 700MHz frequency band. This band will be used in the U.S. to introduce 4G cellular, mobile TV broadcast and other mobile broadband-based services including Long Term Evolution, the next-generation wireless network standard.

"The RF power transistor family includes a 55W driver and two output stage transistors (170W and 240W), which offers the industry highest peak power in the 700MHz band," Infineon said. All of the products are available in Pb-free, RoHS-compliant, thermally enhanced, open-cavity packages with slotted or earless flanges, and are capable of handling a 10:1 VSWR at continuous wave power output.

Typical two-tone peak envelope power performance with a 28V supply voltage for the PTFA070551E and PTFA070551F 55W FETs includes 18.5dB gain and 48 percent efficiency. For the PTFA071701GH and PTFA071701HL 170W FETs, gain is 18dB and efficiency is 40 percent. With a 30V supply, typical two-tone PEP performance of the PTFA072401E and PTFA072401F 240W LDMOS transistors includes 18dB gain and 40 percent efficiency.

Based on Infineon's advanced laterally diffused metal-oxide semiconductor (LDMOS) process technology, the new devices feature internal I/O broadband matching and high linearity. "They are suitable for use in Doherty amplifiers, in which parallel carrier and peaking stages combine to achieve higher efficiency," said Infineon.

Infineon showcased its new family of 700MHz LDMOS RF power transistors at the IEEE MTT-S International Microwave Symposium in Atlanta, Georgia.

- Gina Roos
eeProductCenter





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