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HV-HBT devices offer higher efficiency, lower cost

Posted: 24 Jun 2008 ?? ?Print Version ?Bookmark and Share

Keywords:bipolar transistor? amplifier? PCB?

Aimed at 3G/4G mobile infrastructure applications, TriQuint Semiconductor has launched two high-voltage heterojunction bipolar transistor (HV-HBT) devices that tout greater amplifier efficiency, which can lower initial base station costs, power consumption and operating costs. When paired with TriQuint's high-power HBT devices, the AP631 and AP632 provide a complete RF solution for 3G/4G high-power amplifier (HPA) mobile infrastructure designs.

A typical RF section in a base-station radio is made up of three areas known as the predriver, driver and output stages. The relatively low-power AP631 and AP632 HBT devices are well suited as predrivers and drivers.

The new HV-HBT devices integrate two stages into a single package. This allows designers to reduce the number of discrete amplifier components in a system. When used in a typical base-station HPA design, a 25 percent reduction and a PCB area savings of 12sqcm can be achieved compared to designs using two separate discrete amplifier stages, according to TriQuint.

The amplifiers' high linearity minimizes additional signal distortion for repeater applications when used in final amplifier stages, and reduces backoff power requirements to minimize distortion from high peak to average ratio signals in 3G/4G mobile base stations. This translates into reduced overall system costs and improved efficiency, which can lower HPA power consumption and improve operational expenditures for multicarrier 3G mobile infrastructures.

- Gina Roos
eeProductCenter





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