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Application review and comparative evaluation of low-side gate driver

Posted: 30 Jun 2008 ?? ?Print Version ?Bookmark and Share

Keywords:Mark Dennis? MOSFET switching action? clamped inductive load?

Fairchild Semiconductor's application note 6069 by Mark Dennis provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse drive transformers.

Potential driver solutions, including discrete and integrated driver designs, are discussed. MOSFET driver datasheet current ratings are examined and circuits are presented to assist with evaluating the performance of drivers on the lab bench.

In many low-to-medium power applications, a low-side (ground referenced) MOSFET is driven by the output pin of a pulse-width modulator (PWM) control IC to switch an inductive load. This solution is acceptable if the PWM output circuitry can drive the MOSFET with acceptable switching times without dissipating excessive power. As the system power requirements grow, the number of switches and associated drive circuitry increases. As control circuit complexity increases, it is becoming more common for IT manufacturers to omit onboard drivers because of grounding and noise problems. Synchronous rectifiers (SRs) are increasingly used to replace standard rectifiers when high efficiency and increased power density are important.

View the PDF document for more information.

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