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Panasonic comes up with GaN ICs for millimeter-wave comms

Posted: 07 Jul 2008 ?? ?Print Version ?Bookmark and Share

Keywords:GaN IC? millimeter wave communications? amplifier?

Panasonic has developed Gallium Nitride (GaN) ICs for the receiver in future millimeter-wave communication systems. The amplifier IC features gain of 22dB at 26GHz, which is the world highest value in GaN-based ICs at such high frequencies, says Panasonic.

The GaN IC features integrated microstrip lines that the company says enable very compact three-stage amplifier on a single chip. Panasonic accomplished this by developing a via-hole through chemically stable sapphire formed by a novel laser drilling technique using a high power pulsed laser. The integrated via-holes ensure good ground contacts resulting in reducing the transmission loss on the cost effective sapphire substrate, claims Panasonic. In addition, the company says its proprietary metal-insulator- semiconductor (MIS) transistor with crystalline SiN film as the gate insulator achieves low noise figure of 1.4dB.

Applications for 29 domestic and 21 international patents have been filed.

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