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Radiation-hardened MOSFETs simplify design

Posted: 07 Jul 2008 ?? ?Print Version ?Bookmark and Share

Keywords:radiation hardened logic level MOSFETs? RAD-Hard MOSFETs?

RAD-Hard logic level gate drive MOSFETs

International Rectifier has expanded its portfolio of RAD-Hard Logic Level gate drive MOSFETs with the introduction of 60V, 100V and 250V MOSFETs for switch mode power supplies (SMPS), satellite power distribution systems and resonant power converters in high-reliability applications.

Compared to bipolar transistors, the RAD-Hard MOSFETs can be driven directly from CMOS/TTL logic circuitry, eliminating the need for intermediate components, thereby reducing part count, simplifying drive circuitry and enhancing reliability. Moreover, low on- state resistance (RDS(on)), fast switching and small size, make the new MOSFETs suitable alternatives to traditional bipolar devices.

"These new Logic Level MOSFETs provide an efficient and reliable solution to interfacing CMOS/TTL control circuits, eliminating the need for inefficient bipolar devices, bulky transformers, or expensive driver circuits," said Eugene Kelly, marketing manager for IR's Aerospace and Defense Discrete Products.

The extended family of MOSFETs includes N- and P-channel in single and multichip configurations offered in a range of through hole and surface mount packages including SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, low-ohmic TO-257AA and MO-036AB. The devices have total ionizing dose (TID) capability of up to 300Krad(Si), single event effect (SEE) immunity to 82MeV, and are available in screened and commercial off- the-shelf (COTS) versions.

The new RAD-Hard MOSFETs are available immediately. Pricing begins at US $495.85 each for the IRHLA770Z4 in 1,000-unit quantities. Pricing is subject to change. This product is subject to U.S. export control laws and regulations.





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