Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > RF/Microwave

Power amplifier generates maximum broadband capability

Posted: 18 Aug 2008 ?? ?Print Version ?Bookmark and Share

Keywords:power amplifier? broadband? wireless? 3G?

RF Micro Devices Inc. has achieved a major design win on a leading handset OEM's upcoming 3G multimode handset platform. RFMD made the design win along with the industry's highest performance and most highly integrated triple-path, broadband power amplifier (PA), rendering the best broadband performance and TRP compliance. Based upon current customer targets and design activity, RFMD anticipates more shipments to happen in the Q4 calendar 2008.

RFMD's triple-path 3G PA integrates three broadband (multiband capable) power amplification paths in a compact package. The highly modified PA has two high-band broadband amplifiers and one low-band broadband amplifier, helping 3G handset designers to simultaneously address any combination of the eight major W-CDMA cellular frequency bands without the need for external tuning. Additionally, the broadband, triple-path capability provides handset designers to implement a single RF platform across all 3G band combinations providing maximum flexibility, lessening space requirements and hastening time-to-market.

The triple-path, broadband 3G PA succeeds a highly successful dual-path broadband that is currently in high volume and provides a balanced amplifier design. The balanced design enhances total radiated power (TRP) and specific absorption rate (SAR) performance, reducing the need for costly RF isolators and easing multiband platform implementation.

"We're pleased to support this OEM with our ground-breaking triple-path, broadband 3G power amplifier," said Eric Creviston, president, cellular products group, RFMD. "Handset vendors employing our broadband 3G PA can provide a single, scalable 3G platform that works well with multiple W-CDMA bands through simple changes in filter components. The RF layout of the phone board is not needed," he added.

"We plan to release an added 3G front ends with greater functionality, increased dollar content and higher levels of integration, as future architectures integrate duplexers, switches and other functions previously placed on phone boards discretely," he noted.

RFMD's multiband, broadband 3G offerings include the RF6280 3G transmit system, which fits all major W-CDMA frequency bands and consists of a front end power management IC optimized for either one or both of two PA options: the RF6281 and/or the RF6285. The RF6281 is a single-band power amplifier module (supporting Band I), and the RF6285 is a flexible multiband, broadband power amplifier module (capable of supporting Bands I, II, III, IV, V, VI, VIII, IX).

RFMD takes additional RF content as the handset market pursues to migrate toward data-centric 3G handsets. These handsets with multiple regions need multiple W-CDMA frequency bands and more PAs, duplexers, switches and supporting components. In 2009, RFMD expects that around 50 percent of 3G handsets will support two or more W-CDMA frequency bands.

Article Comments - Power amplifier generates maximum br...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top