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Superjunction MOSFETs trim on-state resistance, gate charge

Posted: 05 Sep 2008 ?? ?Print Version ?Bookmark and Share

Keywords:superjunction MOSFET? power supply? lighting application?

DTMOS II superjunction MOSFETs

Toshiba America Electronic Components Inc. (TAEC) has released a family of 600V DTMOS II superjunction MOSFETs that contribute to higher efficiency of switched-mode power supplies in lighting, due to lower on-state resistance (RDS(ON)) and faster switching characteristics.

Developed by Toshiba Corp., the DTMOS II MOSFETs employ a superjunction structure that enables a reduction in both on-state resistance (RDS(ON)) and gate charge (Qg), which usually are tradeoffs. Typically, when either of these characteristics is reduced, the other increases, but with its superjunction DTMOS II design, Toshiba has been able to reduce both simultaneously, enabling higher power efficiency and switching performance than conventional MOSFETs.

In these devices, Toshiba refined the superjunction structure with the company's second generation DTMOS technology. By applying this design and optimizing the entire device, Toshiba has achieved figure of merit values for RDS(ON) Qg that are approximately 68 percent less than that of conventional Toshiba MOSFETs. This figure of merit is one important performance index for MOSFETs in which smaller is better, and is indicative of higher switching performance and power efficiency.

The first twelve products in the DTMOS II family include 12-, 15-, and 20A 600V MOSFETs, each offered in a choice of four packages, including TO-3P(N), TO-220SIS, TO-220(W) and TFP, a compact surface mount package. The 12A devices feature low on-resistance of 0.4? (?, max.), the 15A devices feature on-resistance of 0.3? (max.) and 20A devices have on-resistance rated at 0.19? (max.).

"With a combination of low on-resistance, fast switching and ruggedness, our new DTMOS II devices are ideally suited for the switched-mode power supply and ballast lighting markets and are expected to enable a significant increase in power efficiency," said Jeff Lo, business development manager, discrete power devices, for TAEC.

Samples of the twelve Toshiba second-generation DTMOS II devices are available with prices beginning at $1.30. The 12A TK12A60U, 15A TK15A60U, and 20A TK20A60U are in mass production and the remaining devices are scheduled to be in mass production by October.





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