Double-sided cooling sets apart power MOSFET
Keywords:MOSFET? cooling double-sided? Schottky diode?
Optimized for the low-side control switch in synchronous rectification for high-current DC/DC converters, VRM applications, graphics cards, and point-of-load in servers and telecom systems, the new SiE726DF offers exceptionally low on-resistance of 0.0024? maximum at a 10V gate drive (0.0033? maximum at 4.5V), and can handle current levels 50 percent higher than the SO-8 in the same footprint size, without a heatsink. The device provides a typical gate charge of 50nC, with a low Qgd/Qgs ratio to help prevent shoot-through.
With a Qrr of 30nC and VSD of 0.37V both of which are more than 50 percent lower than that of a standard MOSFETthe SiE726DF integrated MOSFET and Schottky diode increases efficiency due to less parasitics and reduced power losses linked to the body diode of the MOSFET. As switching frequencies increase, the reduction in power loss becomes even more dramatic. In addition, the elimination of the external Schottky diode allows designers to create smaller, more compact circuit designs while reducing costs.
The double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature with a thermal resistance of 1C/W top and 1C/W bottom. Its leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout regardless of die size for easier PCB design, and is 100 percent Rg and UIS tested.
Samples and production quantities of the SiE726DF are available now, with lead times of 10 to 12 weeks for larger orders.
Related Articles | Editor's Choice |
Visit Asia Webinars to learn about the latest in technology and get practical design tips.