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N-channel MOSFET claims 'lowest' on-resistance

Posted: 21 Nov 2008 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? DC/DC converter? low on-resistance?


Expanding its family of Gen III TrenchFET power MOSFETs, Vishay Intertechnology Inc. has launched a new 20V n-channel device touted to have the lowest on-resistance and on-resistance times gate charge.

The SiR440DP features a maximum on-resistance of 2m? at a 4.5V gate drive and 1.55m? at a 10V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in DC/DC converter applications, is 87 at 4.5V. Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 23 percent at 4.5V and 22.5 percent at 10V, and a 27 percent lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.

The Vishay Siliconix SiR440DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules, servers, and a wide range of systems using point-of-load power conversion.

Vishay has also released the new 20V SiR866DP and SiR890DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5V of 2.5m? and 4m?, on resistance at 10V of 1.9m? and 2.9m?, with typical gate charges of 35.3nC and 20nC. All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are Pb-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the SiR440DP, SiR866DP, and SiR890DP are available now, with lead times of 10 to 12 weeks for large orders.

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