Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > RF/Microwave
?
?
RF/Microwave??

LDMOS transistor delivers 500W RF output power

Posted: 26 Nov 2008 ?? ?Print Version ?Bookmark and Share

Keywords:RF power? LDMOS transistor? L-band radar application?

BLL6H1214-500

NXP Semiconductors has released its latest LDMOS transistor for L-band radar applications that delivers RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.

Targeted at a wide range of L-band radar applications, the BLL6H1214-500 LDMOS L-band RF power transistor sets new standards for efficiency (>50 percent drain efficiency), gain (17dB) and ruggedness at 500W power level when compared to competing bipolar.

"As the first company that launched LDMOS for L- and S-band applications, NXP's high-efficiency LDMOS RF power transistor portfolio is establishing a new industry standard by providing our customers with the ultimate performing and most rugged transistor available on the market," said Mark Murphy, international product marketing manager, RF power products, NXP. "The breakthrough in RF output power of 500W is the result of NXP's collaborative approach with customers, which helped us to deliver easy to design-in transistors for quick time-to-market.

Key performance parameters for BLL6H1214-500, include overdrive without risk up to 5dB; improved pulse droop (0.2dB); supply voltage of 50V.

The device combines the power density of bipolar with the advantages of LDMOS technology for L- band Radar design, and allows for a replacement of the BeO containing packages by an environmentally friendly and RoHS-compliant ceramic package.

NXP's BLL6H1214-500 LDMOS L-band RF power transistor is available immediately.





Article Comments - LDMOS transistor delivers 500W RF ou...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top