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Ultrathin MOSFETs address power challenges in portable apps

Posted: 02 Dec 2008 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? power challenge? portable application?

Addressing the size the power demands of today's portable applications are Fairchild Semiconductor Inc's new ultrathin MicroFET MOSFETs.

The FDMA1027, a 20V P-Channel PowerTrench MOSFET, and the FDFMA2P853, a 20V P-Channel PowerTrench MOSFET with a Schottky diode, are housed in 2mm x 2mm x 0.55mm MLP packages. They are 55 percent smaller and 50 percent lower in height than 3mm x 3mm x 1.1mm MOSFETs that are typically used in low-voltage designs. This thin package option satisfies the requirements for ultra-slim form factors associated with next-generation portable products such as cellphones.

The FDMA1027 and the FDFMA2P853 are designed for efficiency, addressing the power challenges of feature-rich functionalities that tax battery life. Using Fairchild's proprietary PowerTrench MOSFET process that reduces conduction and switching losses, these devices offer power dissipation and low conduction losses. Compared with similar-sized devices housed in 2mm x 2mm SC-70 packaging, the FDMA1027PT and the FDFMA2P853T offer approximately 60 percent lower conduction losses and are able to dissipate 1.4W of power, compared with 300mW with SC-70 packages.

Fairchild's MicroFET family offers advantages such as compact packaging and high performance to address the needs of battery-charging, load-switching, boost and DC-DC conversion.

The FDMA1027 and the FDFMA2P853 use Pb-free terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. Like all of the company's products, FDMA1027 and FDFMA2P853 are designed to meet the requirements of EU's RoHS directive. Both products are now sampling, at $0.57 each for 1,000-piece quantity.

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