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Toshiba to cut NAND production by 30%

Posted: 18 Dec 2008 ?? ?Print Version ?Bookmark and Share

Keywords:NAND production? memory flash? Yokkaichi plant?

Toshiba Corp. will cut its NAND flash memory production at its Yokkaichi Operations plant in Mie Prefecture, Japan by approximately 30 percent, effective January 2009.

Recession in the global economy and the slowdown in consumer spending are affecting demand for semiconductors. This is particularly notable in NAND flash memories, where decreased demand for applications such as memory cards and MP3 players has generated excess supply. Toshiba has fully considered this situation and decided to reduce output at Yokkaichi.

Yokkaichi Operations has four fabs. Fab 3 and Fab 4 produce NAND flash memories on 300mm wafers, Fab 1 and Fab 2 on 200mm wafers. Prior to the January production adjustment, the 300mm wafer lines will suspend operation for 13 days, and the 200mm wafer lines for four days, during the year-end and new-year period.

The company will continue to monitor the NAND market and will review operation plan in Yokkaichi as needed.

As system LSI and discrete are also facing weak demand for digital consumer products, Toshiba has also reviewed operating dates for its other semiconductor plants during the year-end and new-year period, and the details are summarized in the table below.





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