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Rugged RF power transistor released

Posted: 23 Dec 2008 ?? ?Print Version ?Bookmark and Share

Keywords:RF transistor power? radar application? rugged transistor power?

HVVi Semiconductors Inc. has released the company's first product for radar applications in the UHF band that uses its High Voltage Vertical Field Effect Transistor architecture. Operating across the 420-470MHz band, the HVV0405-175 is a fully qualified 175W RF power transistor optimized for gain and ruggedness.

The company also announced the HVV0912-150, a power transistor for Distance Measuring Equipment (DME) applications. Operating across a 960-1,215MHz band, the HVV0912-150 is designed for ground-based DME systems that require a wider bandwidth than the company's earlier announced parts for airborne DME applications.

The HVV0405-175 operates across the 420-470MHz band and delivers up to 175W of power. The new device supplies up to 25dB of gain when pulse width = 300?s and pulse duty cycle = 10% at VDD = 50V and IDQ = 50mA. This UHF part withstands an output load mismatch corresponding to a 20:1 VSWR across all phase angles at rated output power and operating voltage across the entire frequency band.

For designers of ground-based DME systems, the HVV0912-150 delivers up to 150W of power. Operating off a 50V supply voltage, the new transistor delivers power gain of 20dB under a pulse width of 10?s and a pulse duty cycle of 10 percent. The HVV0912-150 is specified to withstand a VSWR of 20:1 across all phase angles. The two new devices are sampling immediately and come in a HV400-style, two-lead metal flanged package with liquid crystal polymer lid. Both devices are fully qualified. The HVV0405-175 sells for $280.42 in quantities up to 24 pieces. The HVV0912-150 sells for $316.61 in similar quantities. Both transistors are available through Richardson Electronics.

- RF Designline

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