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MOSFETs usher lowest on-resistance in SO-8 pack

Posted: 23 Dec 2008 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? on resistance lowest? SO-8 package?

Vishay Intertechnology Inc. has released new 20- and 30V p-channel TrenchFET power MOSFETs with :20V gate source voltage, touted to offer lowest on-resistance for their device types in the SO-8 footprint.

While the available competing devices with these voltage ratings in the SO-8 footprint offer on-resistance only down to 24m#8486:, the Si7633DP offers an ultralow on-resistance of 3.3m#8486; at 10V and 5.5m#8486; at 4.5V. These values are 27 percent lower at 10V, and 28 percent lower at 4.5V than the closest competing 30V device, and 28 percent and 15 percent lower, respectively, than the closest competing 25V SO-8 device. The 30V Si7135DP offers an on-resistance of 3.9m#8486; at 10V and 6.2m#8486; at 4.5V. These values are 13 percent lower at 10 V, and 19.5 percent lower at 4.5V than the closest competing device.

Packaged in the PowerPAK SO-8, both MOSFETs allow for a 60 percent higher maximum drain current and 75 percent higher maximum power dissipation than devices in the SO-8 package.

The devices are designed to be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are always on and drawing current. The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges.

Vishay has also released the Si4459ADY 30V p-channel TrenchFET power MOSFET in the SO-8 package. The device offers an on-resistance of 5m#8486; at 10 V and 7.75m#8486; at 4.5 V. All devices released today are 100 percent Rg- and UIS-tested and halogen-free.

Samples and production quantities of the new Si7135DP and Si7633DP TrenchFET power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.





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