Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Power/Alternative Energy
Power/Alternative Energy??

Features of the high-side family IPS60xx

Posted: 23 Dec 2008 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET IPS60xx? applications automotive? circuitry protection integrated?

The IPS60xx family of protected power MOSFETs consists of five terminal high side devices based on the latest IR proprietary vertical technology called P3 (Power Product Platform). IR protected MOSFETs are vertical power MOSFETs with integrated protection circuitry. The new IPS60XX family features a more efficient power MOSFET with active clamp and integrated protection for over-temperature, current limitation from over-current and reverse battery.

IPS60xx family features a logic level input (IN), a logic ground pin (GND) isolated from power GND and a diagnostic pin (DG). An internal charge pump circuit allows the MOSFET to be driven in a high side configuration without the need of additional external components.

The new P3 technology enables monolithic designs to be implemented in monolithic for RDSON values as low as 14m. This application note explains the features of the high side family, helps the designer to understand how it works and provides suggestions on how to use these devices in the automotive environment.

View the PDF document for more information.

Article Comments - Features of the high-side family IPS...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top