Features of the high-side family IPS60xx

The IPS60xx family of protected power MOSFETs consists of five terminal high side devices based on the latest IR proprietary vertical technology called P³ (Power Product Platform). IR protected MOSFETs are vertical power MOSFETs with integrated protection circuitry. The new IPS60XX family features a more efficient power MOSFET with active clamp and integrated protection for over-temperature, current limitation from over-current and reverse battery.

IPS60xx family features a logic level input (IN), a logic ground pin (GND) isolated from power GND and a diagnostic pin (DG). An internal charge pump circuit allows the MOSFET to be driven in a high side configuration without the need of additional external components.

The new P³ technology enables monolithic designs to be implemented in monolithic for R_DSON values as low as 14mΩ. This application note explains the features of the high side family, helps the designer to understand how it works and provides suggestions on how to use these devices in the automotive environment.

View the PDF document for more information.