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Vishay touts 'smallest' MOSFET with Schottky diode

Posted: 24 Dec 2008 ?? ?Print Version ?Bookmark and Share

Keywords:smallest 20V MOSFET? Schottky diode? portable electronics?


Vishay Intertechnology Inc. has released what it claims to be the smallest 20V n-channel power MOSFET plus Schottky diode.

Featuring the 1.6mm x 1.6mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32V at 100mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5V.

As portable electronics become more compact, the size of components becomes critical. With its ultra-compact footprint, the SiB800EDK is 36 percent smaller than devices in 2mm by 2mm packages, while offering an ultrathin 0.75mm profile. The integration of two components into one package not only saves space, but the inclusion of a trench Schottky keeps the forward voltage low, reducing voltage drop in level shift applications.

In addition, the SiB800EDK offers low on-resistance values from 0.960? at 1.5V VGS to 0.225? at 4.5V VGS. The low on-resistance rating at 1.5 V allows the MOSFET to be used with signals at low levels.

Typical applications for the new device will include level shift switching in I?C interface and boost converters in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.

The SiB800EDK features ESD protection, and is 100 percent Pb-free, halogen-free and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the new SiB800EDK are available now, with lead times of 10 to 12 weeks for larger orders.

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