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Tiny power MOSFETs offer backside insulation

Posted: 27 Jan 2009 ?? ?Print Version ?Bookmark and Share

Keywords:micro foot MOSFET? insulation backside? portable device?


Vishay Intertechnology Inc. has launched what it claims to be the first TrenchFET power MOSFET in the chipscale MICRO FOOT package to feature backside insulation.

The Si8422DB is optimized for power amplifier, battery and load switching in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones. The 2mil backside coating of the device insulates the top of the MICRO FOOT package to electrical shorts from being created by temporary contact with moving parts in portable devices.

This insulation allows the device to be used in applications with very thin height requirements, providing designers with the flexibility to place the MOSFET where other items may be directly above it, such as shielding, buttons or touchscreens, which further compress the product height when depressed. This layout flexibility also translates into reduced parasitics, as the traces can be better optimized by not having to be routed to areas on the PCB with less height restrictions.

The 20V n-channel Si8422DB features an ultra-compact 1.55mm by 1.55mm footprint with a slim 0.64mm profile. The device offers a low on-resistance range from 0.043? at 1.8V VGS to 0.037? at 4.5V VGS, with a maximum gate-source voltage of 8V.

Samples and production quantities of the new Si8422DB are available with lead times of 10 to 12 weeks for larger orders.

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